View 2SC5019_7093.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Transistor
2SC5019
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
s Features
2.60.1
4.50.1 1.60.2
1.50.1
q q q q
Low noise figure NF. High gain. High transition frequency fT. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.4max.
45
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15 3 2 1
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 15 10 2 80 1 150 -55 ~ +150 Unit V V V mA W C C
1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package
marking
Symbol VCBO VCEO VEBO IC PC* Tj Tstg
Marking symbol : W
Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e |2 GUM NF Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V
2.50.1
+0.25
1
Transistor
PC -- Ta
1.4
2SC5019
IC -- VCE
24 Ta=25C 20 IB=200A 100 120 VCE=8V
IC -- VBE
Collector power dissipation PC (W)
1.2
Collector current IC (mA)
Collector current IC (mA)
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion.
180A 160A 16 140A 120A 12 100A 80A 60A 4 40A 20A
25C Ta=75C 80 -25C
1.0
0.8
60
0.6
8
40
0.4
0.2
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600
hFE -- IC
12 VCE=8V
fT -- IC
VCE=8V f=800MHz Ta=25C
Forward current transfer ratio hFE
500
Transition frequency fT (GHz)
10 30 100
10
400 Ta=75C 300 25C 200 -25C 100
8
Ta=75C 25C -25C
6
4
2
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
GUM -- IC
Maximum unilateral power gain GUM (dB)
24 VCE=8V f=800MHz Ta=25C 12
NF -- IC
VCE=8V (Rg=50) f=800MHz Ta=25C
2.4
2.0
20
10
1.6
16
Noise figure NF (dB)
0.3 1 3 10 30 100
8
1.2
12
6
0.8
8
4
0.4
4
2
0 0.1
0.3
1
3
10
30
100
0 0.1
0 0.1
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2

▲Up To Search▲

Price & Availability of 2SC5019

	To Download 2SC5019 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .